零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
FastSwitching FEATURES •DrainCurrentID=14A@TC=25℃ •DrainSourceVoltage- :VDSS=50V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max) •FastSwitching APPLICATIONS •Switchregulators •Switchingconvertersmotordriversandrelaydrivers | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
14A,50V,0.100Ohm,N-ChannelPowerMOSFETs TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
14A,50V,0.100Ohm,N-ChannelPowerMOSFETs TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs Features •14A,50V •rDS(ON)=0.100Ω •TemperatureCompensatingPSPICE™Model •CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingS | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
60VN-ChannelMOSFET Features CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits PeakCurrentvsPulseWidthCurve •175℃OperatingTemperature VDS(V)=60V ••RDS(ON) | UMWUMW Rightway Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司(简称UMW?) | UMW | ||
60VN-ChannelMOSFET Features CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits PeakCurrentvsPulseWidthCurve •175℃OperatingTemperature VDS(V)=60V ••RDS(ON) | UMWUMW Rightway Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司(简称UMW?) | UMW | ||
14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES DrainCurrent-ID=14A@TC=25℃ DrainSourceVoltage-VDSS=50V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs Features •14A,50V •rDS(ON)=0.100Ω •TemperatureCompensatingPSPICE™Model •CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingS | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
14A,50V,0.100Ohm,N-ChannelPowerMOSFETs TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
1746+ |
TO220 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
ON |
23+ |
TO-TO-220 |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
ON |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
INTERSIL |
23+ |
TO-218 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
ON/安森美 |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
MOTOROLA/摩托罗拉 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
ON/安森美 |
23+ |
TO-220 |
6000 |
原装正品,支持实单 |
询价 | ||
MOTOLA |
23+ |
2800 |
正品原装货价格低qq:2987726803 |
询价 | |||
ON/安森美 |
22+ |
TO-220 |
100059 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
ON/安森美 |
22+ |
TO-220 |
100059 |
询价 |
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