isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -20A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.8 Kbytes 页数：2 Pages

ISC

无锡固电

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P08J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -20V,ID = -8A RDS(O

文件：726.29 Kbytes 页数：7 Pages

NCEPOWER

新洁能

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -20A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：293.41 Kbytes 页数：2 Pages

ISC

无锡固电

WMINI8

PANASON

上传：深圳市祥瑞智科技有限公司

汽车电子连接器

SAMTEC/砷泰

上传：天津市博通航睿技术有限公司