TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate

TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES rDS(on) = .0.8 OHMS 500 VOLTS

文件：631.7 Kbytes 页数：6 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：293.04 Kbytes 页数：2 Pages

ISC

无锡固电

TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate

恩XP

N-Channel Enhancement Mode Power MOSFET

文件：287.62 Kbytes 页数：10 Pages

CYSTEKEC

全宇昕科技

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.44 Kbytes 页数：2 Pages

ISC

无锡固电

TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM

文件：158.6 Kbytes 页数：6 Pages

Motorola

摩托罗拉