isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：333.62 Kbytes 页数：2 Pages

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TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS

TMOS E-FET Power Field Effect Transistors D2PAK for Surface Mount Logic Level TMOS (L2TMOS) N–Channel Enhancement–Mode Silicon Gate These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. This

文件：97.83 Kbytes 页数：4 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：333.65 Kbytes 页数：2 Pages

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TMOS POWER FET 42 AMPERES 60 VOLTS

TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy

文件：289.72 Kbytes 页数：10 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 42A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：332.8 Kbytes 页数：2 Pages

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无锡固电

TMOS POWER FET 42 AMPERES 60 VOLTS

TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy

文件：249.58 Kbytes 页数：10 Pages

Motorola

摩托罗拉

N?묬hannel Power MOSFET

文件：213.32 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N?묬hannel Power MOSFET

文件：264.56 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

N?묬hannel Power MOSFET

文件：264.56 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

N?묬hannel Power MOSFET

文件：213.32 Kbytes 页数：7 Pages

ONSEMI

安森美半导体