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MTB3N60E

TMOS POWER FET 3.0 AMPERES 600 VOLTS

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

文件:74.47 Kbytes 页数:4 Pages

Motorola

摩托罗拉

MTB3N60E

High Energy Power FET

文件:146.91 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

MTB3N60E

TMOS E-FET high energy power FET D2PAK for surface mount

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme to

恩XP

恩XP

MTB3N60E

High Energy Power FET

ONSEMI

安森美半导体

详细参数

  • 型号:

    MTB3N60E

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

  • 制造商:

    ON Semiconductor

供应商型号品牌批号封装库存备注价格
onsemi(安森美)
24+
-
7793
支持大陆交货,美金交易。原装现货库存。
询价
ON
24+
30000
询价
MOTOROLA
22+
TO-263
3000
原装正品,支持实单
询价
ON/安森美
23+
TO-263
50000
全新原装正品现货,支持订货
询价
ON/安森美
23+
TO-263
15021
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ON
006+
TO-263
800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ON
23+
TO-263
800
正规渠道,只有原装!
询价
TI
25+
SOIC-16
4352
询价
ON
23+
TO-263
12800
公司只有原装 欢迎来电咨询。
询价
ON/安森美
23+
TO-263
89630
当天发货全新原装现货
询价
更多MTB3N60E供应商 更新时间2025-11-30 16:12:00