MTB23P06V中文资料摩托罗拉数据手册PDF规格书
MTB23P06V规格书详情
TMOS V™ Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM
TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density ofour
50 and 60 volt TMOS devices. Just as with our TMOSE–FET designs, TMOSV is designed to with stand high energy in the avalanche and commutation modes.
New Features of TMOS V
• On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on)Technology
• Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETS
• Avalanche Energy Specified
• IDSSand VDS(on)Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E–FET
产品属性
- 型号：
MTB23P06V
- 制造商：
ON Semiconductor
- 功能描述：
Trans MOSFET P-CH 60V 23A 3-Pin(2+Tab) D2PAK Rail
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
33561 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ON/安森美 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ON/安森美 |
25+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
ON |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
ON/安森美 |
2223+ |
TO-263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
ONS |
22+ |
D2PAK |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
VBsemi |
21+ |
TO263 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ON/安森美 |
24+ |
TO-263 |
505348 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
ON |
24+ |
D2PAK |
6000 |
进口原装正品假一赔十,货期7-10天 |
询价 | ||
ONS |
25+23+ |
D2PAK |
24564 |
绝对原装正品全新进口深圳现货 |
询价 |
