MTB23P06V中文资料PDF规格书
MTB23P06V规格书详情
TMOS V™ Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM
TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density ofour
50 and 60 volt TMOS devices. Just as with our TMOSE–FET designs, TMOSV is designed to with stand high energy in the avalanche and commutation modes.
New Features of TMOS V
• On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on)Technology
• Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETS
• Avalanche Energy Specified
• IDSSand VDS(on)Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E–FET
产品属性
- 型号:
MTB23P06V
- 制造商:
ON Semiconductor
- 功能描述:
Trans MOSFET P-CH 60V 23A 3-Pin(2+Tab) D2PAK Rail
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ONS |
2020+ |
D2PAK |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ON/安森美 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ON/安森美 |
24+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
VBsemi |
21+ |
TO263 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ON/安森美 |
2022 |
SOT263 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
ON/安森美 |
24+23+ |
TO-263 |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
询价 | ||
VBsemi |
24+ |
TO263 |
5688 |
询价 | |||
ON/ON Semiconductor/安森美/安 |
21+ |
TO-263 |
1080 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ON |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
ON |
TO-263 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 |