MTB23P06中文资料PDF规格书
MTB23P06规格书详情
TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount
P-Channel Enhancement-Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured — Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
产品属性
- 型号:
MTB23P06
- 制造商:
Motorola Inc
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
23+ |
TO-263 |
6893 |
询价 | |||
ON |
20+ |
TO-263 |
90000 |
原装正品现货/价格优势 |
询价 | ||
ON |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
询价 | ||
AP |
23+ |
TO-252 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
ON/安森美 |
24+23+ |
TO-263 |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
询价 | ||
ON |
TO-263 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
VBsemi |
21+ |
TO263 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ON |
2023+ |
TO-263 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
ONS |
22+23+ |
D2PAK |
24564 |
绝对原装正品全新进口深圳现货 |
询价 | ||
MOTOROLA |
22+ |
TO-263 |
3000 |
原装正品,支持实单 |
询价 |