MTB23P06中文资料摩托罗拉数据手册PDF规格书

TMOS V™ Power Field Effect Transistor

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM

TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density ofour

50 and 60 volt TMOS devices. Just as with our TMOSE–FET designs, TMOSV is designed to with stand high energy in the avalanche and commutation modes.

New Features of TMOS V

• On–resistance Area Product about One–half that of Standard

MOSFETs with New Low Voltage, Low RDS(on)Technology

• Faster Switching than E–FET Predecessors

Features Common to TMOS V and TMOS E–FETS

• Avalanche Energy Specified

• IDSSand VDS(on)Specified at Elevated Temperature

• Static Parameters are the Same for both TMOS V and TMOS E–FET