MTD5N05

PowerFieldEffectTransistors

PowerFieldEffectTransistors N-ChannelEnhancementModeSiliconGate DPAKforSurfaceMountorInsertionMount

MTD5N05D

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,po

MTD5N05I

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,po

MTP5N05

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP5N05

N-CHANNELENHANCEMENTMODESILICONGATE

SSM5N05FU

TOSHIBAFIELDEFFECTTRANSISTORSILICONNCHANNELMOSTYPE

HighSpeedSwitchingApplications •Smallpackage •Lowonresistance:Ron=0.8Ω(max)(@VGS=4V) :Ron=1.2Ω(max)(@VGS=2.5V) •Lowgatethresholdvoltage

SSM5N05FU

HighSpeedSwitchingApplications