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MT4LC16M4G3

DRAM

GENERAL DESCRIPTION The 16 Meg x 4 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC16M4H9 and MT4LC16M4G3 are functionally organized as 16,777,216 locations containing 4 bits each. The 16,777,216 memory lo

文件:386.18 Kbytes 页数:22 Pages

Micron

美光

MT4LC16M4G3

DRAM

Micron

美光

MT4LC16M4G3DJ-5

DRAM

GENERAL DESCRIPTION The 16 Meg x 4 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC16M4H9 and MT4LC16M4G3 are functionally organized as 16,777,216 locations containing 4 bits each. The 16,777,216 memory lo

文件:386.18 Kbytes 页数:22 Pages

Micron

美光

MT4LC16M4G3DJ-5S

DRAM

GENERAL DESCRIPTION The 16 Meg x 4 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC16M4H9 and MT4LC16M4G3 are functionally organized as 16,777,216 locations containing 4 bits each. The 16,777,216 memory lo

文件:386.18 Kbytes 页数:22 Pages

Micron

美光

MT4LC16M4G3DJ-6

DRAM

GENERAL DESCRIPTION The 16 Meg x 4 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC16M4H9 and MT4LC16M4G3 are functionally organized as 16,777,216 locations containing 4 bits each. The 16,777,216 memory lo

文件:386.18 Kbytes 页数:22 Pages

Micron

美光

MT4LC16M4G3DJ-6S

DRAM

GENERAL DESCRIPTION The 16 Meg x 4 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC16M4H9 and MT4LC16M4G3 are functionally organized as 16,777,216 locations containing 4 bits each. The 16,777,216 memory lo

文件:386.18 Kbytes 页数:22 Pages

Micron

美光

MT4LC16M4G3TG-5

DRAM

GENERAL DESCRIPTION The 16 Meg x 4 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC16M4H9 and MT4LC16M4G3 are functionally organized as 16,777,216 locations containing 4 bits each. The 16,777,216 memory lo

文件:386.18 Kbytes 页数:22 Pages

Micron

美光

MT4LC16M4G3TG-5S

DRAM

GENERAL DESCRIPTION The 16 Meg x 4 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC16M4H9 and MT4LC16M4G3 are functionally organized as 16,777,216 locations containing 4 bits each. The 16,777,216 memory lo

文件:386.18 Kbytes 页数:22 Pages

Micron

美光

MT4LC16M4G3TG-6

DRAM

GENERAL DESCRIPTION The 16 Meg x 4 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC16M4H9 and MT4LC16M4G3 are functionally organized as 16,777,216 locations containing 4 bits each. The 16,777,216 memory lo

文件:386.18 Kbytes 页数:22 Pages

Micron

美光

MT4LC16M4G3TG-6S

DRAM

GENERAL DESCRIPTION The 16 Meg x 4 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC16M4H9 and MT4LC16M4G3 are functionally organized as 16,777,216 locations containing 4 bits each. The 16,777,216 memory lo

文件:386.18 Kbytes 页数:22 Pages

Micron

美光

详细参数

  • 型号:

    MT4LC16M4G3

  • 制造商:

    MICRON

  • 制造商全称:

    Micron Technology

  • 功能描述:

    DRAM

供应商型号品牌批号封装库存备注价格
MT
25+
TSOP-32
18000
原厂直接发货进口原装
询价
MCT
24+/25+
25
原装正品现货库存价优
询价
24+
5000
公司存货
询价
MT
23+
SOJ32
5000
原装正品,假一罚十
询价
MT
TSOP32
4894
全新原装进口自己库存优势
询价
MT
17+
TSOP32
9988
只做原装进口,自己库存
询价
MIC
23+
NA
10986
专做原装正品,假一罚百!
询价
MT
25+23+
TSOP32
34741
绝对原装正品全新进口深圳现货
询价
MT
2447
TSOP32
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
MICRON/美光
23+
SOJ
14084
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多MT4LC16M4G3供应商 更新时间2025-12-1 16:19:00