DRAM

GENERAL DESCRIPTION The 16 Meg x 4 DRAMs are high-speed CMOS, dynamic random-access memory devices contain-ing 67,108,864 bits organized in a x4 configuration. The MT4LC16M4A7 and MT4LC16M4T8 are functionally organized as 16,777,216 locations containing four bits each. The 16,777,216 memory locat

文件：350.8 Kbytes 页数：20 Pages

MICRON

美光

DRAM

GENERAL DESCRIPTION The 16 Meg x 4 DRAMs are high-speed CMOS, dynamic random-access memory devices contain-ing 67,108,864 bits organized in a x4 configuration. The MT4LC16M4A7 and MT4LC16M4T8 are functionally organized as 16,777,216 locations containing four bits each. The 16,777,216 memory locat

文件：350.8 Kbytes 页数：20 Pages

MICRON

美光

DRAM

GENERAL DESCRIPTION The 16 Meg x 4 DRAMs are high-speed CMOS, dynamic random-access memory devices contain-ing 67,108,864 bits organized in a x4 configuration. The MT4LC16M4A7 and MT4LC16M4T8 are functionally organized as 16,777,216 locations containing four bits each. The 16,777,216 memory locat

文件：350.8 Kbytes 页数：20 Pages

MICRON

美光

DRAM

GENERAL DESCRIPTION The 16 Meg x 4 DRAMs are high-speed CMOS, dynamic random-access memory devices contain-ing 67,108,864 bits organized in a x4 configuration. The MT4LC16M4A7 and MT4LC16M4T8 are functionally organized as 16,777,216 locations containing four bits each. The 16,777,216 memory locat

文件：350.8 Kbytes 页数：20 Pages

MICRON

美光

DRAM

Micron

美光