首页 >MT332C>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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P-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription TheseP-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription TheseP-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-ChannelLogicLevelEnhancementModeFieldEffectTransistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
P-ChannelMosfet Application Load/PowerSwitching InterfacingSwitching LogicLevelShift | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC | ||
P-Channel20-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
NeutralGroundingResistorSystem,NGRSERIES–US Description High-resistancegroundingpreventsmanyoftheproblems thatareassociatedwithungroundedandsolidlygrounded electricaldistributionandutilizationsystems.High-resistance groundingcanlimitpoint-of-faultdamage,eliminatetransient overvoltages,reducethearc-flashhazar | Littelfuselittelfuse 力特力特公司 | Littelfuse | ||
PNPSiliconTransistor Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=-0.15V(Max.) •Extremelysmallsizepackage:0.8x0.6x0.4㎜Typ. •ComplementarypairwithNT331 | AUK AUK corp | AUK | ||
PNPSiliconTransistor Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=-0.15V(Max.) •Extremelysmallsizepackage:0.8x0.6x0.4㎜Typ. •ComplementarypairwithNT331 | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | KODENSHI | ||
Generalsmallsignalamplifier | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | KODENSHI | ||
SiliconComplementaryTransistorsAudioPowerAmp,Switch Description: TheNTE331(NPN)andNTE332(PNP)aresiliconepitaxial–basecomplementarypowertransistorsinaTO–220plasticpackageintendedforuseinpowerlinearandswitchingapplications. | NTE NTE Electronics | NTE |
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