MT28F800B3VG-9TET中文资料美光数据手册PDF规格书

GENERAL DESCRIPTION

The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a VPP voltage of either 3.3V or 5V, while all operations are performed with a 3.3V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process.

The MT28F008B3 and MT28F800B3 are organized into eleven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures.

Refer to Micron’s Web site (www.micron.com/flash) for the latest data sheet.

FEATURES

• Eleven erase blocks:

16KB/8K-word boot block (protected)

Two 8KB/4K-word parameter blocks

Eight main memory blocks

• Smart 3 technology (B3):

3.3V ±0.3V VCC

3.3V ±0.3V VPP application programming

5V ±10 VPP application/production programming1

• Compatible with 0.3µm Smart 3 device

• Advanced 0.18µm CMOS floating-gate process

• Address access time: 90ns

• 100,000 ERASE cycles

• Industry-standard pinouts

• Inputs and outputs are fully TTL-compatible

• Automated write and erase algorithm

• Two-cycle WRITE/ERASE sequence

• TSOP, SOP and FBGA packaging options

• Byte- or word-wide READ and WRITE

(MT28F800B3):

1 Meg x 8/512K x 16