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MT28F640J3FS-12中文资料镁光数据手册PDF规格书

MT28F640J3FS-12
厂商型号

MT28F640J3FS-12

功能描述

Q-FLASHTM MEMORY

文件大小

548.36 Kbytes

页面数量

52

生产厂商 Micron Technology
企业简称

Micron镁光

中文名称

美国镁光科技有限公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-5-25 23:35:00

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MT28F640J3FS-12价格和库存,欢迎联系客服免费人工找货

MT28F640J3FS-12规格书详情

GENERAL DESCRIPTION

The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F640J3 contains 67,108,864 bits organized as 8,388,608 bytes (8 bits) or 4,194,304 words (16 bits). This 64Mb device is organized as sixty-four 128KB erase blocks.

Similarly, the MT28F320J3 contains 33,554,432 bits organized as 4,194,304 bytes (8 bits) or 2,097,152 words (16 bits). This 32Mb device is organized as thirty-two 128KB erase blocks.

These three devices feature in-system block locking. They also have common flash interface (CFI) that permits software algorithms to be used for entire families of devices. The software is device-independent, JEDEC ID-independent with forward and backward compatibility.

FEATURES

• x8/x16 organization

• One hundred twenty-eight 128KB erase blocks (128Mb)

Sixty-four 128KB erase blocks (64Mb)

Thirty-two 128KB erase blocks (32Mb)

• VCC, VCCQ, and VPEN voltages:

2.7V to 3.6V VCC operation

2.7V to 3.6V or 4.5V to 5.5V* VCCQ operation

2.7V to 3.6V, or 5V VPEN application programming

• Interface Asynchronous Page Mode Reads:

150ns/25ns read access time (128Mb)

120ns/25ns read access time (64Mb)

110ns/25ns read access time (32Mb)

• Enhanced data protection feature with VPEN = VSS Flexible sector locking Sector erase/program lockout during power transition

• Security OTP block feature Permanent block locking (Contact factory for availability)

• Industry-standard pinout

• Inputs and outputs are fully TTL-compatible

• Common Flash Interface (CFI) and Scalable Command Set

• Automatic write and erase algorithm

• 4.7µs-per-byte effective programming time using write buffer

• 128-bit protection register

64-bit unique device identifier

64-bit user-programmable OTP cells

• 100,000 ERASE cycles per block

• Automatic suspend options:

Block Erase Suspend-to-Read

Block Erase Suspend-to-Program

Program Suspend-to-Read

产品属性

  • 型号:

    MT28F640J3FS-12

  • 制造商:

    MICRON

  • 制造商全称:

    Micron Technology

  • 功能描述:

    Q-FLASHTM MEMORY

供应商 型号 品牌 批号 封装 库存 备注 价格
MICRON/美光
24+
FBGA
33918
只做原装 公司现货库存
询价
MRON/美光
24+
NA/
337
优势代理渠道,原装正品,可全系列订货开增值税票
询价
MICRON/美光
25+
FBGA
996880
只做原装,欢迎来电资询
询价
MT
25+23+
TSOP
34877
绝对原装正品全新进口深圳现货
询价
MT
24+
TSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
MT
24+
TSOP
35200
一级代理/放心采购
询价
Micron
19+
FBGA
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
MT
24+
TSOP
27
询价
MICRON/美光
2447
FBGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
MT
2025+
TSOP
5378
全新原厂原装产品、公司现货销售
询价