GENERAL DESCRIPTION

The MT28F642D20 and MT28F642D18 are highperformance, high-density, nonvolatile memory solutions that can significantly improve system performance. This new architecture features a twomemory-bank configuration that supports dual-bank operation with no latency.

FEATURES

• Single device supports asynchronous, page, and burst operations

• Flexible dual-bank architecture

Support for true concurrent operation with zero latency

Read bank a during program bank b and vice versa

Read bank a during erase bank b and vice versa

• Basic configuration:

One hundred and thirty-five erasable blocks

Bank a (16Mb for data storage)

Bank b (48Mb for program storage)

• VCC, VCCQ, VPP voltages

1.70V (MIN), 1.90V (MAX) VCC, VCCQ (MT28F642D18 only)

1.80V (MIN), 2.20V (MAX) VCC, and 2.25V (MAX) VCCQ (MT28F642D20 only)

1.80V (TYP) VPP (in-system PROGRAM/ERASE)

12V ±5 (HV) VPP tolerant (factory programming compatibility)

• Random access time: 70ns @ 1.80V VCC1

• Burst Mode read access

MAX clock rate: 54 MHz (tCLK = 18.5ns)

Burst latency: 70ns @ 1.80V VCC and 54 MHz

tACLK: 15ns @ 1.80V VCC and 54 MHz

• Page Mode read access1

Four-/eight-word page

Interpage read access: 70ns @ 1.80V

Intrapage read access: 30ns @ 1.80V

• Low power consumption (VCC = 2.20V)

Asynchronous Read < 15mA

Interpage Read < 15mA

Intrapage Read < 5mA

Continuous Burst Read < 10mA

WRITE < 55mA (MAX)

ERASE < 45mA (MAX)

Standby < 50µA (MAX)

Automatic power save (APS) feature

Deep power-down < 25µA (MAX)

• Enhanced write and erase suspend options

• Accelerated programming algorithm (APA) insystem and in-factory

• Dual 64-bit chip protection registers for security purposes

• Cross-compatible command support

Extended command set

Common flash interface

• PROGRAM/ERASE cycle

100,000 WRITE/ERASE cycles per block