2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY

GENERAL DESCRIPTION The MT28F016S5 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 2,097,152 bytes (8 bits). Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC. Due to process technology adv

文件：282.49 Kbytes 页数：24 Pages

MICRON

美光

2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY

GENERAL DESCRIPTION The MT28F016S5 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 2,097,152 bytes (8 bits). Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC. Due to process technology adv

文件：282.49 Kbytes 页数：24 Pages

MICRON

美光

2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY

Micron

美光

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

文件：304.24 Kbytes 页数：48 Pages

INTEL

英特尔

16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY

Intel’s VS/MS28F016SV, 16-Mbit FlashFiIeTM Memory is the latest member of Intel’s high density, high performance memory family for the Industrial, Special Environment, and Military markets. Its user selectable VCC and VPP (SmartVoltage Technology), innovative capabilities, 100 compatibility with t

文件：612.5 Kbytes 页数：50 Pages

INTEL

英特尔