VS28F016SV中文资料英特尔数据手册PDF规格书

Intel’s VS/MS28F016SV, 16-Mbit FlashFiIeTM Memory is the latest member of Intel’s high density, high performance memory family for the Industrial, Special Environment, and Military markets. Its user selectable VCC and VPP (SmartVoltage Technology), innovative capabilities, 100 compatibility with the VE28F008 and M28F008, multiple power savings modes, selective block locking, and very fast read/write performance make it the ideal choice for any applications that need a high density and a wide temperature range memory device. The VS/MS28F016SV is the ideal choice for designers who need to break free from the dependence on slow rotating media or battery backed up memory arrays.

■ VS28F016SV

— -40°C to +125°C

— SE2 Grade

■ MS28F016SV

— -55°C to +125°C

— QML Certified

— SE1 Grade

■ SmartVoltage Technology

— User-Selectable 3.3V or 5V VCC

— User-Selectable 5V or 12V VPP

■ Three Voltage/Speed Options

— 80 ns Access Time, 5.0V ±5

— 85 ns Access Time, 5.0V ±10

— 120 ns Access Time, 3.3V ±10

■ 1 Million Erase Cycles per Block

Typical

■ 14.3 MB/sec Burst Write Transfer Rate

■ Configurable x8 or x16 Operation

■ 56-Lead SSOP Plastic Package

■ Backwards-Compatible with VE28F008,

M28F008 and 28F016SA Command Set

■ Revolutionary Architecture

— Multiple Command Execution

— Write During Erase

— Command Super-Set of the Intel

VE28F008, M28F008

— Page Buffer Write

■ Multiple Power Savings Modes

■ Two 256-Byte Page Buffers

■ State-of-the-Art 0.6 μm ETOX™ IV

Flash Technology