FLASH MEMORY

GENERAL DESCRIPTION The MT28F160C3 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 16,777,216 bits organized as 1,048,576 words (16 bits). The MT28F160C3 is manufactured on 0.22µm process technology in a 48-ball FBGA package. The device has an I/O

文件：341.68 Kbytes 页数：28 Pages

Micron

美光

FLASH MEMORY

Micron

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F160C34 is a nonvolatile, electrically blockerasable (flash), programmable memory containing 16,777,216 bits organized as 1,048,576 words (16 bits). The MT28F160C34 is manufactured on 0.22µm process technology in a 46-ball FBGA package. FEATURES • Thirty-nine erase b

文件：341.08 Kbytes 页数：28 Pages

Micron

美光

FLASH MEMORY

Micron

美光