FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

文件：416.14 Kbytes 页数：30 Pages

MICRON

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

文件：416.14 Kbytes 页数：30 Pages

MICRON

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

文件：416.14 Kbytes 页数：30 Pages

MICRON

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B5 (x8) and MT28F800B5 (x16/x8) are nonvolatile, electrically block-erasable (Flash), programmable read-only memories containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing or erasing the device is done with a 5V VPP v

文件：1.32148 Mbytes 页数：30 Pages

MICRON

美光

FLASH MEMORY

Micron

美光

Package：40-TFSOP（0.724"，18.40mm 宽）；包装：管件 类别：集成电路（IC） 存储器 描述：IC FLASH 8MBIT PARALLEL 40TSOP I

Micron Technology Inc.

Package：40-TFSOP（0.724"，18.40mm 宽）；包装：管件 类别：集成电路（IC） 存储器 描述：IC FLASH 8MBIT PARALLEL 40TSOP I

Micron Technology Inc.

Package：40-TFSOP（0.724"，18.40mm 宽）；包装：管件 类别：集成电路（IC） 存储器 描述：IC FLASH 8MBIT PARALLEL 40TSOP I

Micron Technology Inc.