SYNCHRONOUS DRAM MODULE

256MB / 512MB (x64) 168-PIN SDRAM DIMMs Features • PC100- and PC133-compliant • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • Unbuffered • 256MB (32 Meg x 64), 512MB (64 Meg x 64) • Single +3.3V ±0.3V power supply • Fully synchronous; all signals registered on positive edge of

文件：614.67 Kbytes 页数：24 Pages

MICRON

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SYNCHRONOUS DRAM MODULE

256MB / 512MB (x64) 168-PIN SDRAM DIMMs Features • PC100- and PC133-compliant • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • Unbuffered • 256MB (32 Meg x 64), 512MB (64 Meg x 64) • Single +3.3V ±0.3V power supply • Fully synchronous; all signals registered on positive edge of

文件：614.67 Kbytes 页数：24 Pages

MICRON

美光

8,16 MEG x 64 SDRAM DIMMs

SYNCHRONOUS DRAM MODULE 8, 16 MEG x 64 SDRAM DIMMs

文件：1.31152 Mbytes 页数：20 Pages

MICRON

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8,16 MEG x 64 SDRAM DIMMs

SYNCHRONOUS DRAM MODULE 8, 16 MEG x 64 SDRAM DIMMs

文件：1.31152 Mbytes 页数：20 Pages

MICRON

美光

8,16 MEG x 64 SDRAM DIMMs

SYNCHRONOUS DRAM MODULE 8, 16 MEG x 64 SDRAM DIMMs

文件：1.31152 Mbytes 页数：20 Pages

MICRON

美光

SMALL-OUTLINE DDR SDRAM DIMM

General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM

文件：551.74 Kbytes 页数：31 Pages

MICRON

美光

SMALL-OUTLINE DDR SDRAM DIMM

General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM

文件：551.74 Kbytes 页数：31 Pages

MICRON

美光

SMALL-OUTLINE DDR SDRAM DIMM

General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM

文件：551.74 Kbytes 页数：31 Pages

MICRON

美光

SMALL-OUTLINE DDR SDRAM DIMM

General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM

文件：551.74 Kbytes 页数：31 Pages

MICRON

美光

SMALL-OUTLINE DDR SDRAM DIMM

General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM

文件：551.74 Kbytes 页数：31 Pages

MICRON

美光