SMALL-OUTLINE DDR SDRAM DIMM

General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM

文件：551.74 Kbytes 页数：31 Pages

MICRON

美光

SMALL-OUTLINE DDR SDRAM DIMM

General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM

文件：551.74 Kbytes 页数：31 Pages

MICRON

美光

SMALL-OUTLINE DDR SDRAM DIMM

General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM

文件：551.74 Kbytes 页数：31 Pages

MICRON

美光

SMALL-OUTLINE DDR SDRAM DIMM

General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM

文件：551.74 Kbytes 页数：31 Pages

MICRON

美光

SMALL-OUTLINE DDR SDRAM DIMM

General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM

文件：551.74 Kbytes 页数：31 Pages

MICRON

美光

SMALL-OUTLINE DDR SDRAM DIMM

General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM

文件：551.74 Kbytes 页数：31 Pages

MICRON

美光

SMALL-OUTLINE DDR SDRAM DIMM

General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM

文件：551.74 Kbytes 页数：31 Pages

MICRON

美光

SMALL-OUTLINE DDR SDRAM DIMM

General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM

文件：551.74 Kbytes 页数：31 Pages

MICRON

美光

SMALL-OUTLINE DDR SDRAM DIMM

General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM

文件：551.74 Kbytes 页数：31 Pages

MICRON

美光

SMALL-OUTLINE DDR SDRAM DIMM

General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM

文件：551.74 Kbytes 页数：31 Pages

MICRON

美光