MT16VDDF12864HG-262中文资料镁光数据手册PDF规格书

General Description

The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices.

Features

• 200-pin, small-outline, dual in-line memory module (SODIMM)

• Fast data transfer rates: PC1600, PC2100, and PC2700

• Utilizes 200 MT/s, 266 MT/s, or 333 MT/s DDR SDRAM components

• 512MB (64 Meg x 64), 1GB (128 Meg x 64)

• VDD = VDDQ = +2.5V

• VDDSPD = +2.3V to +3.6V

• 2.5V I/O (SSTL_2 compatible)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; centeraligned with data for WRITEs

• Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle

• Bidirectional data strobe (DQS) transmitted/ received with data—i.e., source-synchronous data capture

• Differential clock inputs CK and CK#

• Four internal device banks for concurrent operation

• Programmable burst lengths: 2, 4, or 8

• Auto precharge option

• Auto Refresh and Self Refresh Modes

• 7.8125µs maximum average periodic refresh interval

• Serial Presence Detect (SPD) with EEPROM

• Programmable READ CAS latency

• Gold edge contacts