首页 >MST7910LB-LF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
1480nmEDFAAPPLICATIONInGaAsPSTRAINEDMQWDC-PBHLASERDIODEMODULE DESCRIPTION TheNX7460LEisa1480nmpumpinglaserdiodemodulewithopticalisolatorforanEDFA(ErDopedopticalFiberAmplifier)thatcanexpandthetransmissionspanandcompensateopticallosses.IthasastrainedMultipleQuantumWell(st-MQW)DC-PBHlaserdiodethatfeatureshighoutput | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
1550nmCWLIGHTSOURCEInGaAsPSTRAINEDMQW-DFBLASERDIODEMODULE DESCRIPTION TheNX8562LBisa1550nmlaserdiodewithPolarizationMaintainFiber(PMF). ThisdeviceisdesignedasCWlightsourceandidealfortransmissionsystemsinwhichexternalmodulatorsareused. FEATURES •OutputpowerPf=20mWMIN. •WavelengthselectableforITU-Tstandards | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
1310nmOPTICALFIBERCOMMUNICATIONSInGaAsPMQW-DFBLASERDIODECOAXIALMODULE DESCRIPTION TheNDL7603PSeriesisa1310nmphase-shiftedDFB(distributedfeedback)laserdiodemodulewithsinglemodefiber.TheMultipleQuantumWell(st-MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverawidetemperaturerangeof-40to+85°C.It | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
1550nmOPTICALFIBERCOMMUNICATIONSEAMODULATORINTEGRATEDMQW-DFBLASERDIODEMODULEFOR2.5Gb/sULTRALONG-REACHAPPLICATIONS DESCRIPTION TheNDL7910PisanEAmodulatorintegrated1550nmDFB-LDfor2.5Gb/s.ThenewlydevelopedbandgapenergycontrolledSelectiveMOVPEtechnologyisutilizedasfabricationmethod.Itisdesignedfor2.5Gb/sultralongreachapplications. FEATURES •Integratedelectroabsorptionmodu | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
CWLIGHTSOURCEInGaAsPSTRAINEDMQW-DFBLASERDIODEMODULEFORD-WDMAPPLICATIONS DESCRIPTION TheNX8563LBSeriesisa1550nmlaserdiodewithPolarizationMaintainFiber(PMF). ThisdeviceisdesignedasCWlightsourceandidealforD-WDMtransmissionsystemsinwhichexternalmodulatorsareused. FEATURES •OutputpowerPf=10mWMIN. •Wavelengthavailabilityλp=1 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
1550nmOPTICALFIBERCOMMUNICATIONSInGaAsPSTRAINEDMQWDFBDC-PBHLASERDIODEMODULE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
1510nmOPTICALFIBERCOMMUNICATIONSInGaAsPSTRAINEDMQWDC-PBHLASERDIODEMODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
1500nmOPTICALFIBERCOMMUNICATIONSInGaAsPMQW-DFBLASERDIODECOAXIALMODULE DESCRIPTION TheNDL7705PSeriesisa1550nmphase-shiftedDFB(DistributedFeed-Back)laserdiodemodulewithopticalisolator.MultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof40to+85C. Itisdesig | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
LASERDIODE 1550nmOPTICALFIBERCOMMUNICATIONS EAMODULATORINTEGRATEDMQW-DFBLASERDIODEMODULE FOR2.5Gb/sULTRALONG-REACHAPPLICATIONS FEATURES •Integratedelectroabsorptionmodulator •Lowmodulationvoltage •WavelengthselectableforITU-Tstandards •14-pinbutterflypackage | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
1550nmOPTICALFIBERCOMMUNICATIONSEAMODULATORINTEGRATEDMQW-DFBLASERDIODEMODULEFOR2.5Gb/sULTRALONG-REACHAPPLICATIONS DESCRIPTION TheNDL7910PisanEAmodulatorintegrated1550nmDFB-LDfor2.5Gb/s.ThenewlydevelopedbandgapenergycontrolledSelectiveMOVPEtechnologyisutilizedasfabricationmethod.Itisdesignedfor2.5Gb/sultralongreachapplications. FEATURES •Integratedelectroabsorptionmodu | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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