丝印：MSN；Package：DO-214AC；400W Transient Voltage Suppressor (TVS) protection device

Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response time of clamping action is virtual

文件：489.87 Kbytes 页数：6 Pages

Microsemi

美高森美

20V(D-S) N-Channel Enhancement Mode Power MOS FET

文件：541.42 Kbytes 页数：6 Pages

MORESEMI

摩矽半导体

20V(D-S) N-Channel Enhancement Mode Power MOS FET

文件：533.12 Kbytes 页数：6 Pages

MORESEMI

摩矽半导体

20V(D-S) N-Channel Enhancement Mode Power MOS FET

文件：591.23 Kbytes 页数：6 Pages

MORESEMI

摩矽半导体

20V(D-S) N-Channel Enhancement Mode Power MOS FET

文件：659.19 Kbytes 页数：7 Pages

MORESEMI

摩矽半导体

20V(D-S) N-Channel Enhancement Mode Power MOS FET

文件：630.41 Kbytes 页数：6 Pages

MORESEMI

摩矽半导体

30V(D-S) N-Channel Enhancement Mode Power MOS FET

文件：546.23 Kbytes 页数：6 Pages

MORESEMI

摩矽半导体

30V(D-S) N-Channel Enhancement Mode Power MOS FET

文件：564.96 Kbytes 页数：6 Pages

MORESEMI

摩矽半导体

30V(D-S) N-Channel Enhancement Mode Power MOS FET

文件：681.84 Kbytes 页数：6 Pages

MORESEMI

摩矽半导体

30V(D-S) N-Channel Enhancement Mode Power MOS FET

文件：659.14 Kbytes 页数：6 Pages

MORESEMI

摩矽半导体