1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM5118165D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. FEATURES • 1,048,576-word · 16-bit configuration • Single 5 V power supply, ±10 tolerance • Input : TTL compatible, low input capacitance • Output : TTL compatible,

文件：285.59 Kbytes 页数：18 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word 횞 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM5118165F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V18165F achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer meta

文件：178.57 Kbytes 页数：15 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576 WORD X 16 BIT HYPER PAGE (EDO) DYNAMIC RAM

Description The TC5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 words by 16 bits. The TC5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat- ing margins, both internaily and to the system us

文件：467.31 Kbytes 页数：9 Pages

TOSHIBA

东芝

16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh

文件：336.68 Kbytes 页数：33 Pages

HITACHIHitachi Semiconductor

日立日立公司

16 M EDO DRAM (1-Mword x 16-bit) 1 k Refresh

文件：597.94 Kbytes 页数：32 Pages

ELPIDA

尔必达

1048576-word x 16-bit Dynamic Random Access Memory

文件：1.61905 Mbytes 页数：27 Pages

HITACHIHitachi Semiconductor

日立日立公司