1,048,576 WORD X 16 BIT HYPER PAGE (EDO) DYNAMIC RAM

Description The TC5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 words by 16 bits. The TC5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat- ing margins, both internaily and to the system us

文件：467.31 Kbytes 页数：9 Pages

TOSHIBA

东芝

1,048,576 WORD X 16 BIT HYPER PAGE (EDO) DYNAMIC RAM

Description The TC5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 words by 16 bits. The TC5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat- ing margins, both internaily and to the system us

文件：467.31 Kbytes 页数：9 Pages

TOSHIBA

东芝

1,048,576 WORD X 16 BIT HYPER PAGE (EDO) DYNAMIC RAM

Description The TC5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 words by 16 bits. The TC5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat- ing margins, both internaily and to the system us

文件：467.31 Kbytes 页数：9 Pages

TOSHIBA

东芝

16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh

文件：336.68 Kbytes 页数：33 Pages

HitachiHitachi Semiconductor

日立日立公司

16 M EDO DRAM (1-Mword x 16-bit) 1 k Refresh

文件：597.94 Kbytes 页数：32 Pages

ELPIDA

尔必达

1048576-word x 16-bit Dynamic Random Access Memory

文件：1.61905 Mbytes 页数：27 Pages

HitachiHitachi Semiconductor

日立日立公司