STP30N06FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.045Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICA

STP30N06FI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=0.05Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

SW30N06

N-channelMOSFET

SW30N06U

N-channelEnhancementmodeTO-251/TO-252MOSFET

SWD30N06

N-channelMOSFET

SWD30N06

N-Channel60-V(D-S)MOSFET

SWD30N06

N-ChannelMOSFETusesadvancedtrenchtechnology

SWI30N06

N-Channel60V(D-S)MOSFET

SWI30N06

N-channelMOSFET

SWP30N06

N-channelMOSFET