RFP30N06LE

30A,60V,ESDRated,0.047Ohm,LogicLevelN-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

RLD30N06

P-ChannelEnhancementModeMOSFET

Description TheRLD30N06usesadvancedtrenchtechnologytoprovideexcellentRDS(ON), lowgatechargeandoperationwithgatevoltagesaslowas4.5V. ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. Application Lithiumbatteryprotection Wirele

SFD30N06

N-Channel60-V(D-S)MOSFET

SFD30N06

N-ChannelMOSFET

SFD30N06

N-ChannelMOSFET

SFP30N06

N-ChannelMOSFET

GeneralDescription ThisPowerMOSFETisproducedusingSemiWell’sadvancedplanarstripe,DMOStechnology.Thislatesttechnologyhasbeenespeciallydesignedtominimizeon-stateresistance,havealowgatechargewithsuperiorswitchingperformance,andruggedavalanchecharacteristics.ThisP

SFP30N06

N-Channel60V(D-S)MOSFET

STP30N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=0.05Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STP30N06

N-Channel60V(D-S)MOSFET

STP30N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.045Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICA