首页 >MSC1435BSPM>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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IntegratedCircuitDualAudioPreamp Description: TheNTE1435isanintegratedcircuitina9–LeadSIPtypepackagedesignedforpreampapplicationsincorporatingtwochannelssuchascarstereoapplications.Withstabilizedpowersourcebuilt–in,thisdeviceoffershighgain,lowdistortion,lownoise,andhighoutputvoltage. | NTE NTE Electronics | NTE | ||
SKTCAPSCREWM12X180(PK5) | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
SingleN-ChannelPowerMOSFET PowerMOSFET30V,89mΩ,3A,SingleN-Channel Thislow-profilehigh-powerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandultralowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorultr | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
General-PurposeSwitchingDeviceApplications General-PurposeSwitchingDeviceApplications Features •1.8Vdrive. •Halogenfreecompliance. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
SingleN-ChannelPowerMOSFET PowerMOSFET30V,89mΩ,3A,SingleN-Channel Thislow-profilehigh-powerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandultralowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorultr | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SingleN-ChannelPowerMOSFET PowerMOSFET30V,89mΩ,3A,SingleN-Channel Thislow-profilehigh-powerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandultralowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorultr | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-Channel40V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel40V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
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