1800 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor

The MRFX1K80N is the over-molded plastic version of MRFX1K80H and enables a 30% lower thermal resistance. It is based on 恩XP's new 65 V LDMOS technology that focuses on ease of use. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, • Low thermal resistance version of MRFX1K80H using 恩XP's OM-1230 over-molded plastic package\n• Based on new 65 V LDMOS technology, designed for ease of use\n• Characterized from 30 to 65 V for extended power range\n• Unmatched input and output\n• High breakdown voltage for enhanced reliability and;

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RF Power LDMOS Transistors

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