Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V

The MRFX600H, MRFX600HS and MRFX600GS high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design supports frequency use from 1.8 to 400 MHz.MRFX Series 65 V LDMOS Technology Read More • Unmatched input and output allowing wide frequency range utilization\n• Output impedance fits a 4:1 transformer\n• Device can be used single-ended or in a push-pull configuration\n• Qualified up to a maximum of 65 VDD operation\n• Characterized from 30 to 65 V for extended power range\n• High brea;

恩XP

RF Power LDMOS Transistors

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恩XP

VRLA Rechargeable Battery

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BB-BATTERY

美美电池

Rectifier Diode Modules

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WIDE BANDWIDTH HIGH VOLTAGE AMPLIFIER

DESCRIPTION: The MSK 600(B) is a high voltage wideband amplifier designed to provide large voltage swings at high slew rates in wideband systems. The true inverting op-amp topology employed in the MSK 600 provides excellent D.C. specifications such as input offset voltage and input bias current.

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MSK