1800 W连续波，1.8-470 MHz，65 V LDMOS宽带射频功率晶体管

The MRFX1K80H is the first device based on NXP's new 65 V LDMOS technology that focuses on ease of use. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applicat • Based on new 65 V LDMOS technology, designed for ease of use\n• Characterized from 30 to 65 V for extended power range\n• Unmatched input and output\n• High breakdown voltage for enhanced reliability and higher efficiency architectures\n• High drain-source avalanche energy absorption capability\n•;

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RF Power LDMOS Transistor

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