MRFX1K80H中文资料1800 W连续波，1.8-470 MHz，65 V LDMOS宽带射频功率晶体管数据手册恩XP规格书

描述 Description

The MRFX1K80H is the first device based on NXP's new 65 V LDMOS technology that focuses on ease of use. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 400 MHz.The MRFX1K80H is pin-compatible (same PCB) with its plastic version MRFX1K80N, with MRFE6VP61K25H and MRFE6VP61K25N (1250 W @ 50 V), and with MRF1K50H and MRF1K50N (1500 W @ 50 V).For additional information contact NXP Semiconductor.

特性 Features

• Based on new 65 V LDMOS technology, designed for ease of use
• Characterized from 30 to 65 V for extended power range
• Unmatched input and output
• High breakdown voltage for enhanced reliability and higher efficiency architectures
• High drain-source avalanche energy absorption capability
• High ruggedness. Handles 65:1 VSWR.
• RoHS compliant
• Lower thermal resistance option in over-molded plastic package: MRFX1K80N
• Included in our product longevity program with assured supply for a minimum of 15 years after launch
Typical Applications
• Industrial, scientific, medical (ISM)
• Laser generation

• Plasma generation

• Particle accelerators

• MRI, RF ablation and skin treatment

• Industrial heating, welding and drying systems
• Radio and VHF TV broadcast
• Aerospace
• HF communications

• Radar