Gallium Arsenide PHEMT RF Power Field Effect Transistor

3.5 GHz, 1.5 W, 6 V POWER FET GaAs PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. • Typical Single-Carrier W-CDMA Performance: VDD = 6 Volts, I

文件：212.89 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Gallium Arsenide PHEMT RF Power Field Effect Transistor

文件：193.5 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

3.5 GHz, 1.5 W, 6 V Power FET GaAs PHEMT

OverviewMRFG35002N6T1 removed from active portfolio. Possible Replacement Part: MRFG35002N6AT1. \n•Typical Single–Carrier W–CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158.5 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.\nPower Gain: 10 dB\n\tDrain Efficiency: 27%\n\tACPR @ 5 MHz Offset:  –41 dBc in 3.84 MHz Channel Bandwidth\n\n;

恩XP

Gallium Arsenide PHEMT RF Power Field Effect Transistor

文件：193.5 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体