Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 600 W CW, 50 V

These high ruggedness devices, MRFE6VP6600N and MRFE6VP6600GN, are designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz. • Unmatched Input and Output Allowing Wide Frequency Range Utilization\n• Device can be used Single-Ended or in a Push-Pull Configuration\n• Qualified Up to a Maximum of 50 VDD Operation\n• Characterized from 30 to 50 V for Extended Power Range\n• Suitable for Linear Application with Appropriate Bia;

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RF Power LDMOS Transistors

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SMD

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安费诺

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NEC

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