1.8-2000 MHz，25 W，50 V LDMOS宽带射频功率晶体管

The MRFE6VS25L is an RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. This device is fabricated using our enhanced ruggedness platform and is suitable for use in applications where high VSWRs are e • Wide Operating Frequency Range\n• Extremely Rugged\n• Unmatched, Capable of Very Broadband Operation\n• Integrated Stability Enhancements\n• Low Thermal Resistance\n• Extended ESD Protection Circuit\n• RoHS Compliant;

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RF Power LDMOS Transistor

文件：1.07918 Mbytes 页数：26 Pages

恩XP

RF Power LDMOS Transistor

1.8--2000 MHz, 25 W, 50 V WIDEBAND RF POWER LDMOS TRANSISTOR RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. This device is fabricated using Freescale’s enhanced ruggedness platform and is suit

文件：1.30753 Mbytes 页数：24 Pages

freescaleFreescale Semiconductor, Inc

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