Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V

MRFE6VP100HR5 and MRFE6VP100HSR5 are RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using Our enhanced ruggedness platform and are suitable for use in applications w • Wide Operating Frequency Range\n• Extremely Rugged\n• Unmatched, Capable of Very Broadband Operation\n• Integrated Stability Enhancements\n• Low Thermal Resistance\n• Integrated ESD Protection Circuitry\n• RoHS Compliant\n• In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.\n•;

恩XP

RF Power LDMOS Transistors

文件：1.21567 Mbytes 页数：20 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistors

文件：1.21567 Mbytes 页数：20 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

高频管

Freescale/飞思卡尔

上传：深圳市翔睿腾科技有限公司

高频管

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市翔睿腾科技有限公司