MRF8S18260H

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAandmulticarrierbasestationapplicationswithfrequenciesfrom1805to1880MHz.CanbeusedinClassABandClassCforalltypicalcellularbasestationmodulationformats. •TypicalSingle--Car

MRF8S18260H

1805-1880 MHz，74 W平均值，30 V单载波W-CDMA横向N信道射频功率MOSFET; • 100% PAR Tested for Guaranteed Output Power Capability\n• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters\n• Internally Matched for Ease of Use\n• Integrated ESD Protection\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• Designed for Digital Predistortion Error Correction Systems\n• Optimized for Doherty Applications\n• RoHS Compliant\n• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13-inch Reel.\n;

The MRF8S18260HR6 and MRF8S18260HSR6 are designed for CDMA and multi-carrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8S18260HR6

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAandmulticarrierbasestationapplicationswithfrequenciesfrom1805to1880MHz.CanbeusedinClassABandClassCforalltypicalcellularbasestationmodulationformats. •TypicalSingle--Car

MRF8S18260HS

Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 74 W Avg., 30 V; • 100% PAR Tested for Guaranteed Output Power Capability\n• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters\n• Internally Matched for Ease of Use\n• Integrated ESD Protection\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• Designed for Digital Predistortion Error Correction Systems\n• Optimized for Doherty Applications\n• RoHS Compliant\n• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13-inch Reel.\n;

The MRF8S18260HR6 and MRF8S18260HSR6 are designed for CDMA and multi-carrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8S18260HSR6

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAandmulticarrierbasestationapplicationswithfrequenciesfrom1805to1880MHz.CanbeusedinClassABandClassCforalltypicalcellularbasestationmodulationformats. •TypicalSingle--Car