MRF7S21150HS中文资料Single W-CDMA Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 44 W Avg., 28 V数据手册恩XP规格书

描述 Description

The MRF7S21150HR3 and MRF7S21150HSR3 are designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications.

特性 Features

• Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1350 mA, Pout = 44 Watts Avg., Full Frequency Band, 3GPP Test Model 1,64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input SignalPAR = 7.5 dB @ 0.01% Probability on CCDF.Power Gain: 17.5 dBDrain Efficiency: 31%Device Output Signal PAR:  6.1 dB @ 0.01% Probability on CCDFACPR @ 5 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 150 Watts CW Peak Tuned Output Power
• Pout @ 1 dB Compression Point ≥ 150 Watts CW
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel