MRF7S19080HS中文资料Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 24 W Avg., 28 V数据手册恩XP规格书

描述 Description

The MRF7S19080HR3 and MRF7S19080HSR3 are designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD-SCDMA and PCN-PCS/cellular radio applications.

特性 Features

• Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 24 Watts Avg., Full Frequency Band, 3GPP Test Model 1,64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input SignalPAR = 7.5 dB @ 0.01% Probability on CCDF.Power Gain: 18 dBDrain Efficiency: 32%Device Output Signal PAR:  6.2 dB @ 0.01% Probability on CCDFACPR @ 5 MHz Offset: –38 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 80 Watts CW Output Power
• Pout @ 1 dB Compression Point ≥ 80 Watts CW
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel