MRF6S19100HSR3中文资料飞思卡尔数据手册PDF规格书

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.

• Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 900 mA,

Pout = 22 Watts Avg., f = 1987 MHz, IS-95 (Pilot, Sync, Paging, Traffic

Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB

@ 0.01 Probability on CCDF.

Power Gain — 16.1 dB

Drain Efficiency — 28 IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Channel Bandwidth

ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 VDD Operation

• Integrated ESD Protection

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.