RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WL

文件：412.45 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellul

文件：579.05 Kbytes 页数：8 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WL

文件：716.32 Kbytes 页数：9 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellul

文件：579.05 Kbytes 页数：8 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WL

文件：412.45 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

2200 MHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET

Overview The MRF21030LR3 is designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.\nArchived content is no longer updated a \n•Wideband CDMA Performance: –45 dB ACPR @ 4.096 MHz, 28 Volts\n   Output Power — 3.5 Watts\n   Power Gain — 14 dB\n   Efficiency — 15%\n\n•Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 30 Watts CW Output Power\n\n•High Gain, High Efficiency and High Linearity\n\n•Integrated ESD Protection;

恩XP

2200 MHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET

Overview The MRF21030LSR3 is designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.\nArchived content is no longer updated \n•Wideband CDMA Performance: –45 dB ACPR @ 4.096 MHz, 28 Volts\n   Output Power: 3.5 Watts\n   Power Gain: 14 dB\n   Efficiency: 15%\n\n•Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 30 Watts CW Output Power\n\n•High Gain, High Efficiency and High Linearity\n\n•Integrated ESD Protection\n\;

恩XP

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

恩XP