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BSS123LT1

PowerMOSFET170mAmps,100Volts

PowerMOSFET170mAmps,100Volts N−ChannelSOT−23 Features •Pb−FreePackagesareAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BSS123LT1

TMOSFETTransistor(N-Channel)

TMOSFETTransistor N–Channel

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

BSS123LT1D

PowerMOSFET170mAmps,100Volts

PowerMOSFET170mAmps,100Volts N−ChannelSOT−23 Features •Pb−FreePackagesareAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BSS123LT1G

PowerMOSFET170mAmps,100Volts

PowerMOSFET170mAmps,100Volts N−ChannelSOT−23 Features •Pb−FreePackagesareAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BSS123LT1G

PowerMOSFET170mAmps,100Volts

PowerMOSFET170mAmps,100Volts N−ChannelSOT−23 Features •Pb−FreePackagesareAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BVSS123LT1G

PowerMOSFET170mAmps,100Volts

PowerMOSFET170mAmps,100Volts N−ChannelSOT−23 Features •Pb−FreePackagesareAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

LBSS123LT1

N-CHANNELPOWERMOSFET

N-CHANNELPOWERMOSFET FEATURE ●Pb-FreePackageisavailable.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LBSS123LT1G

N-Channel100-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

LBSS123LT1G

N-CHANNELPOWERMOSFET

N-CHANNELPOWERMOSFET FEATURE ●Pb-FreePackageisavailable.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

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