IXFP6N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

IXFP6N120P

PolarHiPerFETPowerMOSFET

Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant

IXFP6N120P

PowerMOSFET

IXTH6N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andHighpowerdensity

IXTH6N120

HighVoltagePowerMOSFET

IXTT6N120

HighVoltagePowerMOSFET

MP6N120-C-B

N-CHANNELMOSFET

APPLICATIONS Highefficiencyswitchmode powersupplies Electroniclampballasts basedonhalfbridge UPS FEATURES PlanarMOS Lowgatecharge LowCrss(typical7.0pF) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSproduct

RS6N120BH

Nch80V135APowerMOSFET

Features 1)Lowon-resistance 2)Highpowerpackage(HSOP8) 3)Pb-freeplating;RoHScompliant 4)Halogenfree 5)100%RgandUIStested Application Switching