MP6N120-C-B

N-CHANNEL MOSFET

APPLICATIONS Highefficiencyswitchmode powersupplies Electroniclampballasts basedonhalfbridge UPS FEATURES PlanarMOS Lowgatecharge LowCrss(typical7.0pF) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSproduct

MP6N120-C-BR

Marking：MP6N120；Package：TO-220C；N-CHANNEL MOSFET

APPLICATIONS Highefficiencyswitchmode powersupplies Electroniclampballasts basedonhalfbridge UPS FEATURES PlanarMOS Lowgatecharge LowCrss(typical7.0pF) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSproduct

DTP6N120SC

1200VN-ChannelSiliconCarbidePowerMOSFET

Features ⚫Highblockingvoltage ⚫Highspeedswitchingwithlowcapacitance ⚫Highoperatingjunctiontemperaturecapability ⚫Veryfastandrobustintrinsicbodydiode Applications ⚫Solarinverters ⚫UPS ⚫HighvoltageDC/DCconverters ⚫Switchmodepowersupplies

IXFA6N120P

PolarHiPerFETPowerMOSFET

Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant

IXFA6N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

IXFA6N120P

PowerMOSFET

IXFH6N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

IXFH6N120

HighVoltageHiPerFETPowerMOSFET

HighVoltageHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandto

IXFH6N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

IXFH6N120P

PolarHiPerFETPowerMOSFET

Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant