首页 >MP4003>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SurfaceMountStandardRecoveryPowerRectifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
RFANDMICROWAVETRANSISTORSGENERALPURPOSEAMPLIFIERAPPLICATIONS | ADPOW Advanced Power Technology | ADPOW | ||
Marktech3mmUltraBrightYGLEDs Features Lowdrivecurrent Choiceoflenscolor Canbepackagedontapeinareelorinabox | Marktech Marktech Corporate | Marktech | ||
MonolithicandWaferLevelPackagedThree-AxisAccelerometer | MEMSICMEMSIC Semiconductor (Tianjin) Co., Ltd. 美新半导体美新半导体有限公司 | MEMSIC | ||
InGaAs/InPPINPhotodiodeChips DESCRIPTION Microsemi’sInGaAs/InPPINPhotodiodechipsareidealforwidebandwidth1310nmand1550nmopticalnetworkingapplications. KEYFEATURES LowDarkCurrent Extremelylowcapacitance Widebandwidth Fastresponsetime PPLICATIONS/BENEFIT 1310nmFiberOpticAppli | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE4003usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication. GeneralFeatures ●VDS=40V,ID=3A RDS(ON)=33mΩ@VGS=10V(Typ) RDS(ON)=52mΩ@VGS=4.5V(Typ | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE4003Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication. GeneralFeatures ●VDS=40V,ID=3A RDS(ON)=32mΩ@VGS=10V(Typ) RDS(ON)=43mΩ@VGS=4.5V(Ty | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
SmallSignalMOSFET30V,0.56A,SingleN?묬hannel,SOT??3 SmallSignalMOSFET 30V,0.56A,SingleN−Channel,SOT−23 Features •LowGateVoltageThreshold(VGS(TH))toFacilitateDriveCircuitDesign •LowGateChargeforFastSwitching •ESDProtectedGate •SOT−23PackageProvidesExcellentThermalPerformance •MinimumBreakdownVoltageRatin | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SmallSignalMOSFET30V,0.56A,SingleN?묬hannel,SOT??3 SmallSignalMOSFET 30V,0.56A,SingleN−Channel,SOT−23 Features •LowGateVoltageThreshold(VGS(TH))toFacilitateDriveCircuitDesign •LowGateChargeforFastSwitching •ESDProtectedGate •SOT−23PackageProvidesExcellentThermalPerformance •MinimumBreakdownVoltageRatin | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SmallSignalMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
