POWER TRANSISTOR MODULE SILICON PNP TRIPLE DIFFUSED TYPE

High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Package with heat sink isolated to lead (SIP 12 pins) • High collector power dissipation (4-device operation) : PT = 5 W (Ta = 25°C) • High collector current: IC (DC) = −5 A (max) • High DC cu

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TOSHIBA

东芝

POWER TRANSISTOR MODULE SILICON PNP TRIPLE DIFFUSED TYPE

Toshiba

东芝

Power MOSFET 20 V, 4.1 A, Dual N?묬hannel ChipFET

文件：55.12 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

20-W 24-V Input Isolated DC/DC Converter

文件：193.63 Kbytes 页数：8 Pages

TI

德州仪器

Ka Band Low Noise Amplifier

Key Features • Typical Frequency Range: 30 - 42 GHz • 21 dB Nominal Gain • 2.8 dB Nominal Noise Figure • 14 dBm Nominal P1dB @ 38 GHz • Bias 3 V, 40mA • 0.15 um 3MI pHEMT Technology • Chip Dimensions 1.7 x 0.8 x 0.1 mm (0.067 x 0.031 x 0.004) in Primary Applications • Point-to-Poi

文件：183.94 Kbytes 页数：10 Pages

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