Heterojunction Bipolar Transistor

1800--2800 MHz, 26.5 dB 33 dBm InGaP HBT The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces w

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FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides excep

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InGaP GaAs HBT

1500–2700 MHz, 26.5 dB, 33 dBm InGaP HBT LINEAR AMPLIFIER The MMZ25332B4 is a versatile 2--stage power amplifier targeted at driver and pre--driver applications for macro and micro base stations and final stage applications for small cells. Its versatile design allows operation in any frequency b

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InGaP GaAs HBT

1500–2700 MHz, 26.5 dB, 33 dBm InGaP HBT LINEAR AMPLIFIER The MMZ25332B4 is a versatile 2--stage power amplifier targeted at driver and pre--driver applications for macro and micro base stations and final stage applications for small cells. Its versatile design allows operation in any frequency b

文件：1.21532 Mbytes 页数：20 Pages

恩XP

Heterojunction Bipolar Transistor Technology (InGaP HBT)

1800--2800 MHz, 26.5 dB 33 dBm InGaP HBT The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces w

文件：570.65 Kbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides excep

文件：640.44 Kbytes 页数：19 Pages

恩XP

1500-2800 MHz, 26.5 dB, 33 dBm InGaP HBT

The MMZ25332BT1 is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W-CDMA, TD-SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W-CDMA air interfaces with an ACPR of -50 dBc at an output power of u • Frequency: 1500-2800 MHz\n• P1dB: 33 dBm @ 2500 MHz\n• Power Gain: 26.5 dB @ 2500 MHz\n• OIP3: 48 dBm @ 2500 MHz\n• EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g)\n• Active Bias Control (adjustable externally)\n• Power Down Control via VBIAS Pin\n• Class 3A HBM ESD Rating\n• Single 3 to 5 V Supply\n;

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1500-2700 MHz，26.5 dB，33 dBm InGaP HBT

The MMZ25332B4 is a versatile 2-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain of more than 26.5 dB. • Frequency: 1500-2700 MHz\n• P1dB: 33 dBm @ 2500 MHz\n• Power Gain: 26.5 dB @ 2500 MHz\n• OIP3: 48 dBm @ 2500 MHz\n• EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g)\n• Active Bias Control (adjustable externally)\n• Power Down Control via VBIAS\n• Single 3 to 5 Volt Supply\n• Single-ended Power Detecto;

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