Heterojunction Bipolar Transistor Technology (InGaP HBT)

High Efficiency/Linearity Amplifier

The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 22 dBm, covering frequencies from 1500 to 2800 MHz. It operates from a supply voltage of 3 to 5 V. The amplifier is fully input matched, requires minimal external matching on the output and is housed in a cost--effective, surface mount QFN 3 × 3 package. The device offers state--of--the--art reliability, ruggedness, temperature stability and ESD performance.

• Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 400 mA

Features

• Frequency: 1500–2800 MHz

• P1dB: 33 dBm @ 2500 MHz

• Power Gain: 26.5 dB @ 2500 MHz

• OIP3: 48 dBm @ 2500 MHz

• EVM ≤ 3 @ 23.5 dBm Pout, WLAN (802.11g)

• Active Bias Control (adjustable externally)

• Power Down Control via VBIAS Pin

• Class 3A HBM ESD Rating

• Single 3 to 5 V Supply

• Single--ended Power Detector

• Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package

• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

MMZ25332B属于RF/IF，射频/中频和 RFID > 射频放大器。恩智浦半导体公司制造生产的MMZ25332B射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。