MMZ25332B数据手册恩XP中文资料规格书

描述 Description

The MMZ25332BT1 is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W-CDMA, TD-SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W-CDMA air interfaces with an ACPR of -50 dBc at an output power of up to 22 dBm, covering frequencies from 1500-2800 MHz. It operates from a supply voltage of 3 to 5 V. The amplifier is fully input matched, requires minimal external matching on the output and is housed in a cost-effective, surface mount QFN 3 x 3 package. The device offers state-of-the-art reliability, ruggedness, temperature stability and ESD performance.

特性 Features

• Frequency: 1500-2800 MHz
• P1dB: 33 dBm @ 2500 MHz
• Power Gain: 26.5 dB @ 2500 MHz
• OIP3: 48 dBm @ 2500 MHz
• EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g)
• Active Bias Control (adjustable externally)
• Power Down Control via VBIAS Pin
• Class 3A HBM ESD Rating
• Single 3 to 5 V Supply
• Single-ended Power Detector
• Cost-effective 12-pin, 3 mm QFN Surface Mount Plastic Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7-inch Reel.